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W&Wsens Devices Inc. 

Thin Silicon Photosensors With High NIR Sensitivity

OUR TECHNOLOGY

W&W breakthrough innovation : Lightwave trapping using microholes to enable high speed and high sensitivity in thin Silicon photosensor arrays in the Red and NIR wavelength 

Lightwave Trapping
  • Microhole compatible with CMOS Trench Isolation Etch 

  • Enhance absorption in Thin Silicon 0.1 - 3 micron, 700 nm - 1000 nm wavelength 

  • EQE 85% @850 nm, 1 micron Si - WR 

  • Microholes on thin Ge on Si extend wavelength to 1700 nm

  • Low Jitter (<15ps), High data bandwidth >56Gb/s

Performance and Cost Reduction
  • Standard CMOS manufacturing process, unlike Black Silicon using pulsed laser process 

  • Monolithic Integration of photosensor arrays with CMOS ASICs or...

  • Stacked Technology of photosensor array with CMOS ASICs for BICIS

  • Low manufacturing cost due to Thin Silicon, 3 microns or less

  • High performance low parasitics 

  • Visible / NIR Imaging - single microhole for small pixels

  • 3D Imaging / Time of Flight Imaging 

  • AR / VR, Facial Recognition, LiDAR for ADAS, Security, Medical

  • 1 Tb/s aggregated data bandwidth - Optical Interconnect for Data Center 

  • 56, 6G high capacity optical link  

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Applications

Core Application Sectors & Competitive Advantages 

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W&Wsens Devices Technology Impact

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W&Wsens Devices Microhole to Enhance Red and NIR Sensitivity for Stacked BICIS - Imaging and 3D Imaging 

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Surface Illuminated Microstructure Hole Photodiodes
Si PIN Photodiode 
Ge on Si PIN Photodiode
Ge Pd.png
Scanning Electron Microscope Images
Optical Field Distribution in Microstructure Hole PD using FDTD Simulation
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Microstructure Hole PD / APD Results
Si PIN 850nm Impulse
Ge on Si PIN 1300nm Impulse
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EQE Si PIN PD

Si Absorption layer thickness < 2um

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Responsivity Si APD

Multiplication M=1026 @ 850nm, 8.5uW

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Product

About W&W

Over a cup of cappuccino at a cafe in Palo Alto, W&Wsens Devices was conceived and in a few months grew to over 100 years of aggregated knowledge and experience in photonic devices, optical systems , innovation, IP,manufacturing, and start-ups. All team members come from Fortune 500 companies and / or start ups.

SP Bob Wang - CEO & Co-Founder 

BS RPI, MS MIT

Founder & Chairman of:

R2 (sold to Hologic), 

U-Systems (sold to GE),

EndoSee (sold to Cooper)

QView, and UroViu.

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Shih-Yuan Wang - CTO & Co-Founder

BS, PhD UC Berkeley

HP Labs 200+ Patents

High speed photodetectors

Co-Inventor of Multimode VCSELS 

USPTO : 5,359,447 A

for Datacenter interconnect

 

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Saif Islam - Professor UCD

UCD Collaboration

PhD UCLA 

JDSU, HP Labs

High speed photonic devices

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Aly F. Elrefaie - Chief Scientist

BS Ain Shams University

MS & PhD NYU Engineering

Bellcore, HP Labs, Boeing,  

Optical communication systems

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Toshishige Yamada - Principal Scentist

Physics for advanced materials and devices

BS, MS University of Tokyo

Ph.D Arizona State University 

NEC Labs, Japan

Semiconductor transport theory

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Ekaterina (Katya) Ponizovskaya Devine

Principal Scientist, Theory

MS & PhD Moscow Institue of Physics and Technology 

HP Labs

Theory, numerical modeling

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Lihan Wang -Vice President Strategy

& Business Development 

BA University of Michigan, Ann Arbor

MSc University of Leeds

Agora Labs, UBS 

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About

Market Outlook

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Featured
Contact
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Intellectual Property

W&Wsens Devices Inc IP Portfolio
56 Issued Patents and Published Patent Applications + many pending

                                                 

 

Enhancement of NIR in thin Silicon and thin Germanium on Silicon for CIS, LiDAR and Hyperscale DCI

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Wafer level stacking technology for co-packaging optics Rx

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Demo

Publications & Media

Publications
 
Photon-Trapping Microstructures Enable High-Speed Efficiency Silicon Photodiodes ; Nature Photonics 2017
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High Speed Surface Illuminated Si Photodiode Using Microstructured Holes for Absorption Enhancements at 900-1000nm Wavelength; ACS Photonics 2017
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A New Paradigm in High-Speed and High-Efficiency Silicon Photodiodes for Communication Part I: Enhancing Photon-Material Interactions via Low-Dimensional Structures ; IEEE TED 2017
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A New Paradigm in High-Speed and High-Efficiency Silicon Photodiodes for Communication Part II: Device and VLSI Integration Challenges for Low-Dimensional Structures ; IEEE TED 2017
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High-Speed High-Efficiency Broadband Silicon Photodiodes for Short-Reach Optical Interconnects in Data Centers; OFC 2018
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Surface Passivation of Silicon Photonic Devices with High Surface-to-Volume-Ratio Nanostructures ; Journal of the Optical Society of America B 2018
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Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700nm ; Photonics Research OSA 2018
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Enhanced Photon Detection Efficiency of Silicon Single Photon Avalanche Photodetectors Enabled by Photon Trapping Structure ; DOI:10.1109/PHOSST.2018.8456744 IEEE 2018
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High-Speed High-Efficiency Photon-Trapping Broadband Silicon PIN Photodiodes for Short-Reach Optical Interconnects in Data Centers; IEEE Journal of Lightwave Technology 2019
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Dramatically Enhanced Efficiency in Ultra-fast Silicon MSM Photodiodes with Photon-trapping Structures; IEEE Photonics Technology Letters 2019
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Media
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Fast Silicon Photodiodes ; Nature Photonics
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Silicon Nanostructures Bend Light to Make Faster Photodiodes ; IEEE Spectrum
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Tiny Black Holes Enable a New Type of Photodetector for High Speed Data ; Phys.org
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Nanoholes in Silicon Bolster Photodetector Speed, Efficiency ; Photonics.com
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" Black Holes" in Silicon Enable High-Speed Photodetector ; Photonicsonline.com
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