OUR TECHNOLOGY

W&W breakthrough innovation : Lightwave trapping using microholes to enable high speed, low jitter and high sensitivity in thin Silicon photosensor arrays in the Red and NIR wavelength

Lightwave Trapping

Microhole compatible with CMOS Trench Isolation Etch
Enhance absorption in Thin Silicon 0.1 - 3 micron, 700 nm - 1000 nm wavelength
EQE 85% @850 nm, 1 micron Si - WR
Microholes on thin Ge on Si extend wavelength to 1700 nm
Low Jitter (<15ps), High data bandwidth >56Gb/s

Performance and Cost Reduction

Standard CMOS manufacturing process, unlike Black Silicon using pulsed laser process
Monolithic Integration of photosensor arrays with CMOS ASICs or...
Stacked Technology of photosensor array with CMOS ASICs for BICIS
Low manufacturing cost due to Thin Silicon, 3 microns or less
High performance low parasitics

Visible / NIR Imaging - single microhole for small pixels
3D Imaging / Time of Flight Imaging
AR / VR, Facial Recognition, LiDAR for ADAS, Security, Medical
1 Tb/s aggregated data bandwidth - Optical Interconnect for Data Center
56, 6G high capacity optical link

Applications

Core Application Sectors & Competitive Advantages

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W&Wsens Devices Technology Impact

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W&Wsens Devices Microhole to Enhance Red and NIR Sensitivity for Stacked BICIS - Imaging and 3D Imaging

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Surface Illuminated Microstructure Hole Photodiodes

Si PIN Photodiode

Ge on Si PIN Photodiode

Scanning Electron Microscope Images

Optical Field Distribution in Microstructure Hole PD using FDTD Simulation

Microstructure Hole PD / APD Results

Si PIN 850nm Impulse

Ge on Si PIN 1300nm Impulse

EQE Si PIN PD

Si Absorption layer thickness < 2um

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Responsivity Si APD

Multiplication M=1026 @ 850nm, 8.5uW

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About W&W

Over a cup of cappuccino at a cafe in Palo Alto, W&Wsens Devices was conceived and in a few months grew to over 100 years of aggregated knowledge and experience in photonic devices, optical systems , innovation, IP,manufacturing, and start-ups. All team members come from Fortune 500 companies and / or start ups.

SP Bob Wang - CEO & Co-Founder

BS RPI, MS MIT

Founder & Chairman of:

R2 (sold to Hologic),

U-Systems (sold to GE),

EndoSee (sold to Cooper)

QView, and UroViu.

Shih-Yuan Wang - CTO & Co-Founder

BS, PhD UC Berkeley

HP Labs 200+ Patents

High speed photodetectors

Co-Inventor of Multimode VCSELS

USPTO : 5,359,447 A

for Datacenter interconnect

Saif Islam - Professor UCD

UCD Collaboration

PhD UCLA

JDSU, HP Labs

High speed photonic devices

Aly F. Elrefaie - Chief Scientist

BS Ain Shams University

MS & PhD NYU Engineering

Bellcore, HP Labs, Boeing,

Optical communication systems

Toshishige Yamada - Principal Scentist

Physics for advanced materials and devices

BS, MS University of Tokyo

Ph.D Arizona State University

NEC Labs, Japan

Semiconductor transport theory

Ekaterina (Katya) Ponizovskaya Devine

Principal Scientist, Theory

MS & PhD Moscow Institue of Physics and Technology

HP Labs

Theory, numerical modeling

Lihan Wang -Vice President Strategy

& Business Development

BA University of Michigan, Ann Arbor

MSc University of Leeds

Agora Labs, UBS

Market Outlook

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Intellectual Property

W&Wsens Devices Inc IP Portfolio

34 Issued Patents and Published Patent Applications, 1+ Provisional Patents Applications

Enhancement of light detection efficiency with microstructure holes in high speed photodetectors with reverse bias

Monolithic integration of microstructure holes photodetector with CMOS electronics for silicon & germanium on silicon structures.

Publications & Media

Publications

Photon-Trapping Microstructures Enable High-Speed Efficiency Silicon Photodiodes ; Nature Photonics 2017

High Speed Surface Illuminated Si Photodiode Using Microstructured Holes for Absorption Enhancements at 900-1000nm Wavelength; ACS Photonics 2017

A New Paradigm in High-Speed and High-Efficiency Silicon Photodiodes for Communication Part I: Enhancing Photon-Material Interactions via Low-Dimensional Structures ; IEEE TED 2017

A New Paradigm in High-Speed and High-Efficiency Silicon Photodiodes for Communication Part II: Device and VLSI Integration Challenges for Low-Dimensional Structures ; IEEE TED 2017

High-Speed High-Efficiency Broadband Silicon Photodiodes for Short-Reach Optical Interconnects in Data Centers; OFC 2018

Surface Passivation of Silicon Photonic Devices with High Surface-to-Volume-Ratio Nanostructures ; Journal of the Optical Society of America B 2018

Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700nm ; Photonics Research OSA 2018

Enhanced Photon Detection Efficiency of Silicon Single Photon Avalanche Photodetectors Enabled by Photon Trapping Structure ; DOI:10.1109/PHOSST.2018.8456744 IEEE 2018

High-Speed High-Efficiency Photon-Trapping Broadband Silicon PIN Photodiodes for Short-Reach Optical Interconnects in Data Centers; IEEE Journal of Lightwave Technology 2019

W&Wsens Devices Inc

Thin Silicon Photosensors for the Next Generation

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