W&Wsens Devices Inc.
Thin Silicon Photosensors for the Next Generation
OUR TECHNOLOGY
W&W breakthrough innovation : Lightwave trapping using microholes to enable high speed, low jitter and high sensitivity in thin Silicon photosensor arrays in the Red and NIR wavelength
Lightwave Trapping
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Microhole compatible with CMOS Trench Isolation Etch
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Enhance absorption in Thin Silicon 0.1 - 3 micron, 700 nm - 1000 nm wavelength
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EQE 85% @850 nm, 1 micron Si - WR
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Microholes on thin Ge on Si extend wavelength to 1700 nm
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Low Jitter (<15ps), High data bandwidth >56Gb/s
Performance and Cost Reduction
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Standard CMOS manufacturing process, unlike Black Silicon using pulsed laser process
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Monolithic Integration of photosensor arrays with CMOS ASICs or...
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Stacked Technology of photosensor array with CMOS ASICs for BICIS
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Low manufacturing cost due to Thin Silicon, 3 microns or less
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High performance low parasitics
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Visible / NIR Imaging - single microhole for small pixels
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3D Imaging / Time of Flight Imaging
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AR / VR, Facial Recognition, LiDAR for ADAS, Security, Medical
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1 Tb/s aggregated data bandwidth - Optical Interconnect for Data Center
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56, 6G high capacity optical link
Applications
Core Application Sectors & Competitive Advantages
W&Wsens Devices Technology Impact
W&Wsens Devices Microhole to Enhance Red and NIR Sensitivity for Stacked BICIS - Imaging and 3D Imaging
Surface Illuminated Microstructure Hole Photodiodes
Si PIN Photodiode
Ge on Si PIN Photodiode
Scanning Electron Microscope Images
Optical Field Distribution in Microstructure Hole PD using FDTD Simulation
Microstructure Hole PD / APD Results
Si PIN 850nm Impulse
Ge on Si PIN 1300nm Impulse
EQE Si PIN PD
Si Absorption layer thickness < 2um
Responsivity Si APD
Multiplication M=1026 @ 850nm, 8.5uW
About W&W
Over a cup of cappuccino at a cafe in Palo Alto, W&Wsens Devices was conceived and in a few months grew to over 100 years of aggregated knowledge and experience in photonic devices, optical systems , innovation, IP,manufacturing, and start-ups. All team members come from Fortune 500 companies and / or start ups.
SP Bob Wang - CEO & Co-Founder
BS RPI, MS MIT
Founder & Chairman of:
R2 (sold to Hologic),
U-Systems (sold to GE),
EndoSee (sold to Cooper)
QView, and UroViu.
Shih-Yuan Wang - CTO & Co-Founder
BS, PhD UC Berkeley
HP Labs 200+ Patents
High speed photodetectors
Co-Inventor of Multimode VCSELS
for Datacenter interconnect
Aly F. Elrefaie - Chief Scientist
BS Ain Shams University
MS & PhD NYU Engineering
Bellcore, HP Labs, Boeing,
Optical communication systems
Toshishige Yamada - Principal Scentist
Physics for advanced materials and devices
BS, MS University of Tokyo
Ph.D Arizona State University
NEC Labs, Japan
Semiconductor transport theory
Ekaterina (Katya) Ponizovskaya Devine
Principal Scientist, Theory
MS & PhD Moscow Institue of Physics and Technology
HP Labs
Theory, numerical modeling
Lihan Wang -Vice President Strategy
& Business Development
BA University of Michigan, Ann Arbor
MSc University of Leeds
Agora Labs, UBS
Market Outlook
Intellectual Property
W&Wsens Devices Inc IP Portfolio
48 Issued Patents and Published Patent Applications,+ many pending
Enhancement of NIR in thin Silicon and thin Germanium on Silicon for CIS, LiDAR and Hyperscale DCI
Wafer level stacking technology for co-packaging optics Rx
Publications & Media
Publications
Photon-Trapping Microstructures Enable High-Speed Efficiency Silicon Photodiodes ; Nature Photonics 2017
High Speed Surface Illuminated Si Photodiode Using Microstructured Holes for Absorption Enhancements at 900-1000nm Wavelength; ACS Photonics 2017
A New Paradigm in High-Speed and High-Efficiency Silicon Photodiodes for Communication Part I: Enhancing Photon-Material Interactions via Low-Dimensional Structures ; IEEE TED 2017
A New Paradigm in High-Speed and High-Efficiency Silicon Photodiodes for Communication Part II: Device and VLSI Integration Challenges for Low-Dimensional Structures ; IEEE TED 2017
High-Speed High-Efficiency Broadband Silicon Photodiodes for Short-Reach Optical Interconnects in Data Centers; OFC 2018
Surface Passivation of Silicon Photonic Devices with High Surface-to-Volume-Ratio Nanostructures ; Journal of the Optical Society of America B 2018
Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700nm ; Photonics Research OSA 2018
Enhanced Photon Detection Efficiency of Silicon Single Photon Avalanche Photodetectors Enabled by Photon Trapping Structure ; DOI:10.1109/PHOSST.2018.8456744 IEEE 2018
High-Speed High-Efficiency Photon-Trapping Broadband Silicon PIN Photodiodes for Short-Reach Optical Interconnects in Data Centers; IEEE Journal of Lightwave Technology 2019
Dramatically Enhanced Efficiency in Ultra-fast Silicon MSM Photodiodes with Photon-trapping Structures; IEEE Photonics Technology Letters 2019
Media
Fast Silicon Photodiodes ; Nature Photonics
Silicon Nanostructures Bend Light to Make Faster Photodiodes ; IEEE Spectrum
Tiny Black Holes Enable a New Type of Photodetector for High Speed Data ; Phys.org
Nanoholes in Silicon Bolster Photodetector Speed, Efficiency ; Photonics.com
" Black Holes" in Silicon Enable High-Speed Photodetector ; Photonicsonline.com
